? 9.1 ? 0.45 lead 13 nom . 6 .1 21 cathode and case anode 5.08 2.1 SMP550G-EN prelim. 7 /9 7 semelab plc. telephone (01455) 556565. telex: 341927. fax (01455) 552612. mechanical d a t a dimensions in mm. p .i.n. ph o t odiode description the SMP550G-EN is a silicon p.i.n. photodiode incorporated in a lensed, hermetic metal can package. the electrical terminations are via two leads of diameter 0.018" on a pitch of 0.2". the cathode of the photodiode is electrically connected to the package. the larger photodiode active area provides greater sensitivity than the smp400 range of devices, with a corresponding reduction in speed. the photodiode structure has been optimised for high sensitivity, light measurement applications. the narrow viewing angles provide better coupling to on-axis illumination sources. the metal can and optional screening mesh ensure a rugged device with a high degree of immunity to radiated electrical interference. t o-39 p a c k age operating temperature range storage temperature range t emperature coefficient of responsi v ely t emperature coefficient of da r k current r e v erse breakd o wn v oltage -40c to +70c -45c to +80c 0.35% per c x2 per 8c r ise 60v absolute maximum r a tings (t case = 25c unles s otherwise stated) fe a tures ? nar r o w receiving angles ? excellent linearity ? l o w noise ? wide spectral response ? wide intrinsic b an d width ? l o w leak a ge current ? l o w ca p a ci t ance ? integral optical fi l ter option note 1 ? t o39 hermetic me t al can p a ck a ge ? emi screening mesh av ailable note 1 contact semelab plc f or filter options pin 1 C anode pin 2 C cathode & case
SMP550G-EN prelim. 1 /9 7 semelab plc. telephone (01455) 556565. telex: 341927. fax (01455) 552612. characteristic t est conditions. min. t yp. max. units responsi v ely acti v e area da r k current breakd o wn v oltage capacitance rise time nep l at 900nm e = 0 da r k 1v r e v erse e = 0 da r k 10v r e v erse e = 0 da r k 10a r e v erse e = 0 da r k 0v r e v erse e = 0 da r k 20v r e v erse 30v r e v erse 50 w 900nm 0.45 0.55 5.19 2 4 16 22 60 80 55 10 9 19x10 -14 0.45 a/w mm 2 na v pf ns w/ ? hz char a cteristic s (t amb =25c unles s otherwise stated) s p ec t r a l r e s p o n s e 0 2 0 4 0 6 0 8 0 1 0 0 0 2 0 0 4 0 0 6 0 0 8 0 0 1 0 0 0 1 2 0 0 w a v e l e n g t h ( n m ) relative responsivity (%)
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